The self-assembled nanostructured materials described in this book offer a number of advantages over conventional material technologies in a wide range of sectors. World leaders in the field of self-organisation of nanostructures review the current status of research and development in the field, and give an account of the formation, properties, and self-organisation of semiconductor nanostructures. Chapters on structural, electronic and optical properties, and devices based on self-organised nanostructures are also included.
Future research work on self-assembled nanostructures will connect diverse areas of material science, physics, chemistry, electronics and optoelectronics. This book will provide an excellent starting point for workers entering the field and a useful reference to the nanostructured materials research community. It will be useful to any scientist who is involved in nanotechnology and those wishing to gain a view of what is possible with modern fabrication technology.
Mohamed Henini is a Professor of Applied Physics at the University of Nottingham. He has authored and co-authored over 750 papers in international journals and conference proceedings and is the founder of two international conferences. He is the Editor-in-Chief of "Microelectronics Journal" and has edited three previous Elsevier books.
Key Features:
- Contributors are world leaders in the field
- Brings together all the factors which are essential in self-organisation of quantum nanostructures
- Reviews the current status of research and development in self-organised nanostructured materials
- Provides a ready source of information on a wide range of topics
- Useful to any scientist who is involved in nanotechnology
- Excellent starting point for workers entering the field
- Serves as an excellent reference manual

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.

Quantum Materials, Devices, and Applications covers the advances made in quantum technologies, both in research and mass production for applications in electronics, photonics, sensing, biomedical, environmental and agricultural applications. The book includes new materials, new device structures that are commercially available, and many more at the advanced research stage. It reviews the most relevant, current and emerging materials and device structures, organized by key applications and covers existing devices, technologies and future possibilities within a common framework of high-performance quantum devices. This book will be ideal for researchers and practitioners in academia, industry and those in materials science and engineering, electrical engineering and physics disciplines.

This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a how to on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.

MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage.
Condenses fundamental science of MBE into a modern reference, speeding up literature reviewDiscusses new materials, novel applications and new device structures, groundingcurrent commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community"

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications.
The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage.
This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.
Broad review of optoelectronic applications of III-V nitrides

* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.

* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.

The high speed lasers operating at wavelength of 1.3 um and 1.55 um are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers.In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development.

"Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology" organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics
* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.
* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas
* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community."